High-Temperature DIC Measurement of Wafer Thermal Warpage: Quantifying Warpage vs. Temperature

During heating, wafers may develop pronounced thermal warpage due to differences in thermal expansion coefficients between materials, thin-film stress, and packaging structure. Excessive warpage can easily affect subsequent lamination, bonding, and packaging processes, so it is necessary to accurately understand how the wafer topography changes with temperature.

Haytham Monocular 3D visual strain gaugeUsing monocular 3D DIC digital image correlation technology, non-contact 3D measurement of wafers can be performed at step temperatures such as room temperature, 50°C, 100°C, 150°C, 200°C, and 250°C. The system synchronously acquires the full-field out-of-plane displacement of the wafer surface, quantifies the overall warpage, and presents the warpage morphology of the central region, the edge region, and different directions.

By comparing the data from each temperature stage, the topography evolution of the wafer from heating to the constant-temperature stage can be analyzed, and it can be determined whether the warpage direction changes and whether abnormal deformation exists in local regions. Compared with single-point height measurement, full-field DIC provides more complete spatial distribution information.

In high-temperature environments, the installation and stability of attached sensors are easily limited. Non-contact visual measurement reduces the influence of sensors on the wafer surface and provides experimental data for semiconductor packaging process optimization, material matching, thermal stress analysis, and thermal reliability design.